Improved gate oxide integrity of strained Si n-channel metal oxide silicon field effect transistors using thin virtual substrates - ePrints

Improved gate oxide integrity of strained Si n-channel metal oxide silicon field effect transistors using thin virtual substrates

Lookup NU author(s): Liang Yan,Dr Sarah Olsen,Dr Enrique Escobedo-Cousin,Professor Anthony O'Neill

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Author(s): Yan L, Olsen SH, Escobedo-Cousin E, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2008

Volume: 103

Issue: 9

Print publication date: 01/01/2008

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics

URL:

DOI: 10.1063/1.2917286

Notes: Article no. 094508 10 pages

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